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YBACUO THIN-FILMS ON SI SUBSTRATE

被引：6
作者：
KRASNOSVOBODTSEV, SI
PECHEN, EV
机构：
[1] P.N. Lebedev Physical Institute Academy of Sciences, Moscow, 117924
来源：
PHYSICA C | 1991年 / 185卷
关键词：
D O I：
10.1016/0921-4534(91)91173-2
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
YBa2Cu3O7-x(YBaCuO) films of 200nm thickness on Si substrates covered by 20nm ZrO2 were prepared by two-laser ablation technique. The influence of the ZrO2 buffer sublayer preparation conditions on Si diffusion into high-temperature super-conductor (HTSC) film were investigated. To overcome the diffusion process we proposed and realized two approaches. First: a homoepitaxy technique of HTSC film deposition. Second: a two-step ZrO2 sublayer creation technique. The critical temperature Tc(R = 0) of the YBaCuO thin films on Si substrates was as high as 88,5 K.
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页码：2097 / 2098
页数：2
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