FIELD-EFFECT MODULATION OF CHARGE-DENSITY-WAVE TRANSPORT IN NBSE3 AND TAS3

被引：73

作者：

ADELMAN, TL ^{[1
]}

ZAITSEVZOTOV, SV ^{[1
]}

THORNE, RE ^{[1
]}

机构：

[1] RUSSIAN ACAD SCI,INST RADIOENGN & ELECTR,MOSCOW 103907,RUSSIA

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 74卷 / 26期

关键词：

D O I：

10.1103/PhysRevLett.74.5264

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have constructed MOSFET-like structures using the quasi-one-dimensional conductors NbSe3 and TaS3. At temperatures below the Peierls transition, an applied gate voltage modulates the threshold field for sliding motion of charge-density waves by up to 40%. The resulting modulation of the collective conductance can be more than 2 orders of magnitude larger than that of the single-particle conductance. We consider several possible mechanisms for this conductance modulation, and suggest electric-field-induced variations of the charge-density-wave order parameter as the most plausible mechanism. © 1995 The American Physical Society.

引用

页码：5264 / 5267

页数：4

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