FORMATION OF CUINSE2 THIN-FILMS BY RAPID THERMAL RECRYSTALLIZATION

被引：20

作者：

MOONEY, GD ^{[1
]}

HERMANN, AM ^{[1
]}

TUTTLE, JR ^{[1
]}

ALBIN, DS ^{[1
]}

NOUFI, R ^{[1
]}

机构：

[1] SOLAR ENERGY RES INST,GOLDEN,CO 80401

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 23期

关键词：

D O I：

10.1063/1.104805

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polycrystalline thin-film CuInSe2 has been formed by rapid thermal processing of vacuum codeposited Cu, In, and Se. Films were fabricated and characterized in three composition regions: Cu-poor (approximately 20 at. % Cu), stoichiometric (25 at. %), and Cu-rich (approximately 28 at. %). Characterization results are presented including x-ray diffraction analysis, electron probe for microanalysis, scanning electron microscopy, and optical reflection and transmission measurements. Results show that nearly single-phase material has been formed from codeposited precursors with a post-deposition annealing time of less than 2 min. The films have optical absorption coefficients in the high 10(4) cm-1 range with minimum subgap absorption, and an optical band gap of 1.0 eV with smooth morphologies amenable to photovoltaic device fabrication.

引用

页码：2678 / 2680

页数：3

共 13 条

[1] PRODUCTION OF SINGLE-PHASE CHALCOPYRITE CULNSE2 BY SPRAY PYROLYSIS [J].