A PYROELECTRIC MATRIX SENSOR USING PVDF ON SILICON-CONTAINING FET READOUT CIRCUITRY

被引:5
作者
HAMMES, PCA [1 ]
REGTIEN, PPL [1 ]
SARRO, PM [1 ]
机构
[1] DELFT UNIV TECHNOL,DELFT INST MICROELECTR & SUBMICRON TECHNOL,DEPT ELECT ENGN,2600 GB DELFT,NETHERLANDS
关键词
D O I
10.1016/0924-4247(93)80049-M
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper the performances of several nine-element infrared matrix sensors using the pyroelectric polymer PVDF are discussed. The improvement of the sensitivity of the sensors, when using a diode instead of an integrated resistor for the biasing of the readout matrix, was experimentally verified. The sensitivity of the sensor covered by a 9 mum PVDF foil increased by a factor of 120 to 6 V/W at 20 Hz. Using a 25 mum foil the sensitivity increased even further to 40 V/W at 20 Hz. The S/N ratio improved by a factor of 30 to 70 dB at 20 Hz for an input infrared power of 1.5 mW. Also, a sensor using JFETs for readout was realized in a BIFET process. The performance of this matrix sensor was similar to that of the MOSFET matrix sensor.
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页码:290 / 295
页数:6
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