ELECTRON-HOLE DROPS IN SILICON

被引：15

作者：

CAPIZZI, M

VOOS, M

BENOITALAGUILLAUME, C

MCGRODDY, JC

机构：

[1] CNRS,GRP PHYS SOLIDES,TOUR 23,2 PL JUSSIEU,PARIS,FRANCE

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1016/0038-1098(75)90058-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：709 / 712

页数：4

共 37 条

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[3] ASNIN VM, 1970, JETP LETT-USSR, V11, P99
[4] ASNIN VM, 1970, ZH EKSP TEOR FIZ, V11, P162
[5] BENOITAL.C, 1973, PHYS REV B, V7, P1723, DOI 10.1103/PhysRevB.7.1723
[6] BENOITAL.C, 1971, CR ACAD SCI B PHYS, V272, P236
[7] BENOITALAGUILLA.C, UNPUBLISHED DATA
[8] ELECTRON-HOLE LIQUIDS IN SEMICONDUCTORS
BRINKMAN, WF
RICE, TM
[J]. PHYSICAL REVIEW B, 1973, 7 (04): : 1508 - 1523
[9] CONDENSATION OF EXCITONS IN GERMANIUM AND SILICON
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NOZIERES, P
[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (17): : 2369 - +
[10] COMBESCOT M, PRIVATE COMMUNICATIO