VACANCY FORMATION ENTHALPIES IN AIBIIIC2VI CHALCOPYRITE SEMICONDUCTORS

被引:48
作者
NEUMANN, H
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D O I
10.1002/crat.2170180710
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
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页码:901 / 906
页数:6
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