WAVELENGTH MODULATION SPECTROSCOPY OF GA1-XALXAS

被引：5

作者：

LANDE, R ^{[1
]}

MADELON, R ^{[1
]}

HAIRIE, A ^{[1
]}

FORTINI, A ^{[1
]}

机构：

[1] UNIV CAEN,PHYS SOLIDE LAB,F-14032 CAEN,FRANCE

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1977年 / 12卷 / 03期

关键词：

D O I：

10.1051/rphysap:01977001203048300

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：483 / 485

页数：3

共 16 条

[1] ALFEROV ZI, 1972, SOV PHYS SEMICOND+, V5, P1228
[2] COMPOSITION DEPENDENCE OF FUNDAMENTAL EDGE IN GA1-XALXSB ALLOYS
AUVERGNE, D
MERLE, P
ZEINELDIN, A
MATHIEU, H
NGUYENVANMAU, A
[J]. SOLID STATE COMMUNICATIONS, 1975, 17 (04) : 511 - 514
[3] ELECTROREFLECTANCE SPECTRA OF ALXGA1-X AS ALLOYS
BEROLO, O
WOOLLEY, JC
[J]. CANADIAN JOURNAL OF PHYSICS, 1971, 49 (10) : 1335 - &
[4] BUMELIS AI, 1976, SOV PHYS SEMICOND, V9, P1081
[5] ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE
CARDONA, M
SHAKLEE, KL
POLLAK, FH
[J]. PHYSICAL REVIEW, 1967, 154 (03): : 696 - +
[6] Cardona M., MODULATION SPECTROSC
[7] GOWDA SI, 1975, APPL PHYS LETT, V27, P392
[8] EVALUATION OF ELECTRONIC ENERGY BAND STRUCTURES OF GAAS AND GAP
GRAY, AM
[J]. PHYSICA STATUS SOLIDI, 1970, 37 (01): : 11 - &
[9] LUMINESCENCE IN INDIRECT BANDGAP ALXGA1-XAS
KRESSEL, H
NICOLL, FH
HAWRYLO, FZ
LOCKWOOD, HF
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (11) : 4692 - &
[10] THERMOREFLECTANCE IN SEMICONDUCTORS
MATATAGUI, E
THOMPSON, AG
CARDONA, M
[J]. PHYSICAL REVIEW, 1968, 176 (03): : 950 - +