CHARACTERIZATION OF SIGE/SI HETEROSTRUCTURES FORMED BY GE+ AND C+ IMPLANTATION

被引：45

作者：

FUKAMI, A ^{[1
]}

SHOJI, K ^{[1
]}

NAGANO, T ^{[1
]}

YANG, CY ^{[1
]}

机构：

[1] SANTA CLARA UNIV,MICROELECTR LAB,SANTA CLARA,CA 95053

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 22期

关键词：

D O I：

10.1063/1.103888

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Formation of SiGe/Si heterostructures by germanium ion implantation was investigated. A germanium-implanted layer was grown epitaxially in the solid phase by thermal annealing. Two kinds of crystalline defects were observed. One is a misfit dislocation, and the other is a residual dislocation caused by ion bombardment. The p-n junction formed in the SiGe layer has a leakage current three orders of magnitude larger than that of a pure Si p-n junction fabricated with an identical process except for the Ge+ implantation. Carbon doping in the SiGe layer improves its crystalline quality and the junction characteristics.

引用

页码：2345 / 2347

页数：3

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