MOLECULAR-BEAM EPITAXY GROWTH OF CUO AND CU2O FILMS WITH CONTROLLING THE OXYGEN-CONTENT BY THE FLUX RATIO OF CU/O+

被引：61

作者：

KAWAGUCHI, K

KITA, R

NISHIYAMA, M

MORISHITA, T

机构：

[1] Superconductivity Research Laboratory, ISTEC, Koto-ku, Tokyo, 135

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 143卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(94)90059-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have investigated the molecular beam epitaxy (MBE) growth of oxide thin films in ultrahigh vacuum (UHV) using a mass-separated, low-energy, oxygen ion (O+) beam as an oxygen source. Epitaxial growth of CuO films on unheated (001)MgO substrates at 3 X 10(-9) Torr was confirmed with an orientation relationship of CuO(111)parallel to MgO(001) and CuO[($) over bar 110]parallel to MgO[110]. Phase formation of CuO and Cu2O was controlled by the flux ratio Cu/O+ The Cu2O films were grown at Cu/O+ of about 0.6 at 400 degrees C with an orientation relationship of Cu2O(110)parallel to MgO(001) and Cu2O[001]parallel to MgO[110]. The results show that this technique has a capability of adjusting the oxygen content in oxide thin films by flux control during MBE growth in UHV.

引用

页码：221 / 226

页数：6

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