THE DEPENDENCE ON GROWTH TEMPERATURE OF THE PHOTOLUMINESCENCE PROPERTIES OF NITROGEN-DOPED ZNSE GROWN BY MOCVD

Growth of nitrogen-doped ZnSe films by low pressure MOCVD using dimethylzinc and hydrogenselenide as reactants has been carried out, and the dependence of low-temperature photoluminescence properties of nitrogen-doped films on growth temperature has been examined. It is shown that the nitrogen atoms act as shallow acceptors in ZnSe, with an activation energy of about 100-110 meV. However, some deep centers related to the nitrogen impurity are also introduced into highly nitrogen-doped ZnSe films, and the resistivity of nitrogen-doped ZnSe films remains high.