TFT CHARACTERISTICS WITH DISTRIBUTED TRAPS IN SEMICONDUCTOR

被引：7

作者：

DEMASSA, TA ^{[1
]}

REFIOGLU, HI ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,TEMPE,AZ 85281

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 04期

关键词：

D O I：

10.1016/0038-1101(75)90084-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：315 / 319

页数：5

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