DEEP-LEVEL CHANGES ASSOCIATED WITH DEGRADATION OF GALLIUM-PHOSPHIDE RED-LIGHT-EMITTING DIODES

被引：38

作者：

HENRY, CH ^{[1
]}

DAPKUS, PD ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 09期

关键词：

D O I：

10.1063/1.323237

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4067 / 4072

页数：6

共 20 条

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[2]

DAPKUS PD, 1976, J APPL PHYS, V47, P4061, DOI 10.1063/1.323236

[3]

ECKTON WH, UNPUBLISHED

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[5] THERMALLY STIMULATED CURRENT MEASUREMENTS AND THEIR CORRELATION WITH EFFICIENCY AND DEGRADATION IN GAP LEDS [J].

FABRE, E ;

BHARGAVA, RN .

APPLIED PHYSICS LETTERS, 1974, 24 (07) :322-324

[6]

HENRY CH, TO BE PUBLISHED

[7]

KASAMI A, UNPUBLISHED

[8] NONRADIATIVE RECOMBINATION AT DEEP LEVELS IN GAAS AND GAP BY LATTICE-RELAXATION MULTIPHONON EMISSION [J].

LANG, DV ;

HENRY, CH .

PHYSICAL REVIEW LETTERS, 1975, 35 (22) :1525-1528

[9] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[10] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3014-3022

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