EFFECTS OF DEUTERIUM PLASMAS ON SILICON NEAR-SURFACE PROPERTIES

被引：11

作者：

LINDSTROM, JL

OEHRLEIN, GS

SCILLA, GJ

YAPSIR, AS

CORBETT, JW

机构：

[1] UNIV ALBANY,DEPT PHYS,ALBANY,NY 12222

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[3] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12180

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 08期

关键词：

D O I：

10.1063/1.342666

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3297 / 3300

页数：4

共 22 条

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[8] HYDROGEN PLASMA INDUCED DEFECTS IN SILICON [J].

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SCILLA, GJ .

APPLIED PHYSICS LETTERS, 1988, 53 (18) :1735-1737

[9] NEAR-SURFACE DAMAGE AND CONTAMINATION AFTER CF4-H2 REACTIVE ION ETCHING OF SI [J].

OEHRLEIN, GS ;

TROMP, RM ;

TSANG, JC ;

LEE, YH ;

PETRILLO, EJ .

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[10] REACTIVE ION ETCHING RELATED SI SURFACE RESIDUES AND SUBSURFACE DAMAGE - THEIR RELATIONSHIP TO FUNDAMENTAL ETCHING MECHANISMS [J].

OEHRLEIN, GS ;

LEE, YH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1585-1594

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