DANGLING BOND IN A SI-H

[1] ORIGIN OF THE PHOTOINDUCED CHANGES IN HYDROGENATED AMORPHOUS-SILICON [J]. SOLAR CELLS, 1983, 9 (1-2): : 133 - 148

[2] ADLER D, 1984, AIP C P, V120, P70

[3] THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM [J]. PHYSICAL REVIEW B, 1980, 21 (12): : 5662 - 5686

[4] BERNHOLC J, 1985, J ELECTRON MATER A, V14, P781

[5] IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY [J]. PHYSICAL REVIEW LETTERS, 1982, 48 (02) : 109 - 112

[6] ELECTRON-SPIN RESONANCE OF DOPED GLOW-DISCHARGE AMORPHOUS-SILICON [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 105 (01): : 265 - 274

[7] THE CORRELATION-ENERGY OF THE DANGLING SILICON BOND IN A-SI-H [J]. SOLID STATE COMMUNICATIONS, 1982, 44 (04) : 477 - 480

[8] JOANNOPOULOS JD, 1984, PHYSICS HYDROGENATED

[9] JOANNOPOULOS JD, 1985, PHYSICS DISORDERED M, P19

[10] LeComber P. G., 1979, Amorphous semiconductors, P251

[1] ORIGIN OF THE PHOTOINDUCED CHANGES IN HYDROGENATED AMORPHOUS-SILICON [J]. SOLAR CELLS, 1983, 9 (1-2): : 133 - 148

[2] ADLER D, 1984, AIP C P, V120, P70

[3] THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM [J]. PHYSICAL REVIEW B, 1980, 21 (12): : 5662 - 5686

[4] BERNHOLC J, 1985, J ELECTRON MATER A, V14, P781

[5] IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY [J]. PHYSICAL REVIEW LETTERS, 1982, 48 (02) : 109 - 112

[6] ELECTRON-SPIN RESONANCE OF DOPED GLOW-DISCHARGE AMORPHOUS-SILICON [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 105 (01): : 265 - 274

[7] THE CORRELATION-ENERGY OF THE DANGLING SILICON BOND IN A-SI-H [J]. SOLID STATE COMMUNICATIONS, 1982, 44 (04) : 477 - 480

[8] JOANNOPOULOS JD, 1984, PHYSICS HYDROGENATED

[9] JOANNOPOULOS JD, 1985, PHYSICS DISORDERED M, P19

[10] LeComber P. G., 1979, Amorphous semiconductors, P251