THE GROWTH AND INSITU CHARACTERIZATION OF CHEMICAL VAPOR-DEPOSITED SIO2

被引：5

作者：

IYER, R

CHANG, RR

LILE, DL

机构：

[1] Colorado State Univ, Fort Collins,, CO, USA, Colorado State Univ, Fort Collins, CO, USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 83卷 / 02期

关键词：

The authors acknowledge with gratitude the financial support of NASA; Lewis and the Dc- partment of the Air Force; Hanscom Field. in the pursuit of this research;

D O I：

10.1016/0022-0248(87)90020-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：290 / 296

页数：7

共 9 条

[1] CHANG RR, 1987, J APPL PHYS MAR
[2] EVAPORATION OF INP UNDER KNUDSEN (EQUILIBRIUM) AND LANGMUIR (FREE) EVAPORATION CONDITIONS
FARROW, RFC
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1974, 7 (17) : 2436 - 2448
[3] KRAWCZYK S, 1984, ELECTRON LETT, V20, P406
[4] INDIRECT PLASMA DEPOSITION OF SILICON DIOXIDE
MEINERS, LG
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 655 - 658
[5] A 64-BIT 800-MHZ INSULATED-GATE CCD ON INP
MESSICK, L
COLLINS, DA
LILE, DL
[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) : 680 - 682
[6] INFLUENCE OF THE NEAR-BAND-EDGE SURFACE-STATES ON THE LUMINESCENCE EFFICIENCY OF INP
MOISON, JM
VANROMPAY, M
BENSOUSSAN, M
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (20) : 1362 - 1364
[7] NAGAHAMA K, 1984 INT EL DEV M IE, P190
[8] EVIDENCE FOR INTERFACIAL DEFECTS IN METAL-INSULATOR-INP STRUCTURES INDUCED BY THE INSULATOR DEPOSITION
SAUTREUIL, B
VIKTOROVITCH, P
BLANCHET, R
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 2322 - 2324
[9] NEW AND UNIFIED MODEL FOR SCHOTTKY-BARRIER AND III-V INSULATOR INTERFACE STATES FORMATION
SPICER, WE
CHYE, PW
SKEATH, PR
SU, CY
LINDAU, I
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1422 - 1433

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