CHARACTERIZATION OF IN2SN3 FILMS OBTAINED BY SLURRY PAINTING

被引：17

作者：

HERRASTI, P

FATAS, E

机构：

[1] Departamento Electroquimica, Facultad de Ciencias, Universidad Autonoma de Madrid, Madrid

来源：

JOURNAL OF MATERIALS SCIENCE | 1990年 / 25卷 / 08期

关键词：

D O I：

10.1007/BF00575384

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Layers of ln2S3 were prepared by a slurry painting method from powder of the respective semiconductor, followed by annealing in nitrogen and hydrogen. The layers were characterized by X-ray powder diffraction, surface analysis, optical properties and for their photoelectrochemical behaviour. Incorporation of the flux model InCl3 into the layers produces recrystallization and growth of large grains and it can also act as a dopant for the semiconductor. © 1990 Chapman and Hall Ltd.

引用

页码：3535 / 3540

页数：6

共 9 条

[1] N-CUINSE2 BASED PHOTOELECTROCHEMICAL CELLS - IMPROVED, STABLE PERFORMANCE IN AQUEOUS POLYIODIDE THROUGH RATIONAL SURFACE AND SOLUTION MODIFICATIONS [J].