PHOTOPUMPED BLUE LASERS WITH ZNSSE-ZNMGSSE DOUBLE HETEROSTRUCTURE AND ATTEMPT AT DOPING IN ZNMGSSE

被引:26
作者
MORINAGA, Y
OKUYAMA, H
AKIMOTO, K
机构
[1] Sony Corporation Research Center, Yokohama, Hodogaya-ku, 240
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 1B期
关键词
PHOTOPUMPED BLUE LASER; ZNSSE-ZNMGSSE DH; 500-K; TO; DOPING;
D O I
10.1143/JJAP.32.678
中图分类号
O59 [应用物理学];
学科分类号
摘要
We observed the lasing operation of ZnSSe-ZnMgSSe double heterostructure (DH) photopumped blue lasers up to 500 K. The wavelength at room temperature (RT) and threshold intensity at 300 K were 464.5 nm and 105 kW/cm2, respectively. Characteristic temperature (T0) was estimated to be 170 K. These results indicate that this structure has good thermal stability. Both n-type and p-type doping in ZnMgSSe were successfully performed. Both n-type and p-type ZnMgSSe show good properties for fabricating laser diodes.
引用
收藏
页码:678 / 680
页数:3
相关论文
共 3 条
[1]  
[Anonymous], ELECTRONIC STRUCTURE
[2]   EPITAXIAL-GROWTH OF ZNMGSSE ON GAAS SUBSTRATE BY MOLECULAR-BEAM EPITAXY [J].
OKUYAMA, H ;
NAKANO, K ;
MIYAJIMA, T ;
AKIMOTO, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (9B) :L1620-L1623
[3]   ZNSE/ZNMGSSE BLUE LASER DIODE [J].
OKUYAMA, H ;
MIYAJIMA, T ;
MORINAGA, Y ;
HIEI, F ;
OZAWA, M ;
AKIMOTO, K .
ELECTRONICS LETTERS, 1992, 28 (19) :1798-1799