EXTRACTION OF AMORPHOUS-SILICON SOLAR-CELL PARAMETERS BY INVERSE MODELING

A novel and unique numerical method of extraction of physical parameters from the measured characteristics was applied for the first time to single junction p-i-n amorphous silicon solar cells to determine several important input parameters used for their modelling. A set of realistic parameters, which describe the solar cells, has been determined from the fits of simulated behaviour to the measured one. The single junction p-i-n solar cells were deposited at the Utrecht University. A set of input parameters that closely describes the solar cells behaviour is an important step for their further optimisation.