THE C-V METHOD FOR CHARACTERIZING ISFET OR EOS DEVICES WITH ION-SENSITIVE MEMBRANES

被引：26

作者：

FABRY, P

LAURENTYVONNOU, L

机构：

[1] Laboratoire d'Ionique et d'Electrochimie du Solide de Grenoble (URA D1213), ENSEEG, 38402 Saint Martin d'Heres Cedex

来源：

JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1990年 / 286卷 / 1-2期

关键词：

D O I：

10.1016/0022-0728(90)85062-A

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

AgCI layers have been used as an example to show that the characteristic impedance of the layer material interferes with space-charge capacitance measurements of EOS devices. Correction methods are proposed to evaluate the flat band voltage accurately. The impedance characteristics of silver chloride are consistent with literature data but a significant difference is observed between the apparent and the real geometrical factors specific to the deposition conditions. Experimental results demonstrate the need for a thermodynamically reversible cell for measuring Cl- concentration. © 1990.

引用

页码：23 / 40

页数：18

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