HIGH-RESOLUTION ELECTRON-MICROSCOPY OBSERVATION OF DEFECTS IN 180 MEV CU-11+ ION-IRRADIATED BI2SR2CACU2O8 CRYSTALS

被引：17

作者：

CHENEVIER, B ^{[1
]}

IKEDA, S ^{[1
]}

KUMAKURA, H ^{[1
]}

TOGANO, K ^{[1
]}

OKAYASU, S ^{[1
]}

KAZUMATA, Y ^{[1
]}

机构：

[1] JAPAN ATOM ENERGY RES INST,TOKAI,IBARAKI 31911,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 6B期

关键词：

ION IRRADIATION; HIGH-TEMPERATURE SUPERCONDUCTING BI2SR2CACU2O8; HIGH-RESOLUTION ELECTRON MICROSCOPY;

D O I：

10.1143/JJAP.31.L777

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Irradiation with 180 MeV Cu11+ ions, perpendicular to the surface of a 15-mu-m-thick Bi2Sr2CaCu2O8 layer, enhances the irreversibility fields and increases the values of the intragrain J(c) of the superconducting material. Irradiation-induced structural damages have been observed by high-resolution electron microscopy. Crystal defects consist of long continuous cylindrical columns of highly damaged material that traverse the layer. Columns are parallel to the direction of the ion beam. Diameter values lie between 2 and 8 nm.

引用

页码：L777 / L779

页数：3

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