TEMPERATURE UNIFORMITY IN RTP FURNACES

被引：38

作者：

SORRELL, FY ^{[1
]}

FORDHAM, MJ ^{[1
]}

OZTURK, MC ^{[1
]}

WORTMAN, JJ ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 01期

关键词：

15;

D O I：

10.1109/16.108214

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The heat transfer to a wafer in a RTP furnace is simulated by an analytical/numerical model. The model includes radiant heat transfer to the wafer from the lamps, heat conduction within the wafer, and emission of radiation from the wafer. Geometric optics are used to predict the radiant heat flux distribution over the wafer. The predicted wafer surface temperature distribution is compared to measurements made in an RTP furnace for two different reflector geometries. Lamp configurations and the resulting irradiance required to produce a uniform wafer temperature are defined.

引用

页码：75 / 80

页数：6