A REEVALUATION OF WORST-CASE POSTIRRADIATION RESPONSE FOR HARDENED MOS-TRANSISTORS

被引：90

作者：

FLEETWOOD, DM

DRESSENDORFER, PV

TURPIN, DC

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1987年 / 34卷 / 06期

关键词：

D O I：

10.1109/TNS.1987.4337449

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1178 / 1183

页数：6

共 35 条

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