TRANSIENT ELECTRONIC TRANSPORT IN INP UNDER THE CONDITION OF HIGH-ENERGY ELECTRON INJECTION

被引：24

作者：

BRENNAN, K

HESS, K

TANG, JYF

IAFRATE, GJ

机构：

[1] UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA

[2] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

[3] USA, ERADCOM, ELECTR TECHNOL & DEVICES LAB, DIV ELECTRON MAT RES, FT MONMOUTH, NJ 07703 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 12期

关键词：

D O I：

10.1109/T-ED.1983.21440

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1750 / 1754

页数：5

相关论文

共 16 条

[1] CONWELL EM, 1967, HIGH FIELD TRANSPORT, P155
[2] Frey J., 1980, International Electron Devices Meeting. Technical Digest, P613
[3] BALLISTIC AND OVERSHOOT ELECTRON-TRANSPORT IN BULK SEMICONDUCTORS AND IN SUBMICRONIC DEVICES
GHIS, A
CONSTANT, E
BOITTIAUX, B
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) : 214 - 221
[4] BALLISTIC ELECTRON-TRANSPORT IN SEMICONDUCTORS
HESS, K
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) : 937 - 940
[5] HUBERT DC, 1976, J PHYS C SOLID STATE, V9, P3969
[6] TRANSIENT TRANSPORT AND TRANSFERRED ELECTRON BEHAVIOR IN GALLIUM-ARSENIDE UNDER THE CONDITION OF HIGH-ENERGY ELECTRON INJECTION
IAFRATE, GJ
MALIK, RJ
TANG, JY
HESS, K
[J]. SOLID STATE COMMUNICATIONS, 1983, 45 (03) : 255 - 258
[7] MALIK RJ, 1980, I PHYS C SER, V56, P697
[8] TRANSIENT AND STEADY-STATE ELECTRON-TRANSPORT PROPERTIES OF GAAS AND INP
MALONEY, TJ
FREY, J
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) : 781 - 787
[9] POLAR MODE SCATTERING IN BALLISTIC TRANSPORT GAAS DEVICES
MALONEY, TJ
[J]. ELECTRON DEVICE LETTERS, 1980, 1 (04): : 54 - 54
[10] NEUBERGER M, 1971, HDB ELECTRONIC MATER, V2, P108