ACCOUNTING FOR BAND-STRUCTURE EFFECTS IN THE HYDRODYNAMIC MODEL - A 1ST-ORDER APPROACH FOR SILICON DEVICE SIMULATION

This paper presents a non-parabolic formulation of the hydrodynamic model for Si device simulation. By adopting a first-order approach, non-parabolic band effects are included as simple corrections to the conventional hydrodynamic model. These corrections are shown to improve the accuracy of the hydrodynamic model under submicron device conditions. The first-order approach captures the important effects of non-parabolicity in the conservation relations by introducing a minimal number of approximations. Unlike previously reported non-parabolic models, only a single empirical constant is required in addition to the relaxation times. An advantage of the formulation presented here is that the average electron energy is retained as a state variable, and an electron temperature need not be defined. Advanced hot-carrier models based on average electron energy will benefit directly from the improved accuracy of the model.