Effects of resist thickness and thin-film interference in I-line and deep ultraviolet optical lithography

被引：5

作者：

Xiao, JB

Garofalo, J

Cirelli, R

Vaidya, S

机构：

[1] AT&T Bell Lab, Murray Hill

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 06期

关键词：

D O I：

10.1116/1.588275

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As the resolution of optical lithography reaches 0.35 mu m and below, linewidth can no longer be predicted by aerial image alone. Accordingly, we incorporate thin-film interference within the resist/substrate stack and postexposure bake diffusion effects in our latent image formation model. The impact of resist thickness and antireflective coatings on optical proximity effect and process latitude has been examined. Taking various optical effects into account, our simulation matches the experimental data very well. Using the enhanced simulation tool, we have studied the practical process window and possible enhancement techniques. (C) 1995 American Vacuum Society.

引用

页码：2897 / 2903

页数：7

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