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EFFECTS OF 173 MEV XE-129 ION IRRADIATION ON EPITAXIAL YBA2CU3O-CHI FILMS

被引：98
作者：
ROAS, B
HENSEL, B
HENKE, S
KLAUMUNZER, S
KABIUS, B
WATANABE, W
SAEMANNISCHENKO, G
SCHULTZ, L
URBAN, K
机构：
[1] SIEMENS AG, FORSCHUNGSLAB, W-8520 ERLANGEN, GERMANY
[2] HAHN MEITNER INST KERNFORSCH BERLIN GMBH, W-1000 BERLIN 39, GERMANY
[3] FORSCHUNGSZENTRUM JULICH, INST FAVORS O FRAGRANCES IWC, W-5170 JULICH 1, GERMANY
来源：
EUROPHYSICS LETTERS | 1990年 / 11卷 / 07期
关键词：
D O I：
10.1209/0295-5075/11/7/015
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Epitaxially grown YBau302 films have been irradiated with 173 MeVl29 Xe ions. A nonlinear decrease of the critical superconducting transition temperature T, and an exponential increase of the resistivity p is observed. "he c-axis parameter is extended to about 12w with increasing Xe fluence and the twin boundaries disappear. The 1-2-3 phase is amorphized along the paths of the Xe ions within an area of 40 A in diameter. A defect-induced enhancement of the critical current density j, in magnetic fields B is observed after low fluencies only if the flux lines are aligned parallel to the amorphized ion traces. © 1990 IOP Publishing Ltd.
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页码：669 / 674
页数：6
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