EMITTER RESISTANCE OF ARSENIC-DOPED AND PHOSPHORUS-DOPED POLYSILICON EMITTER TRANSISTORS

被引：35

作者：

CHOR, EF

ASHBURN, P

BRUNNSCHWEILER, A

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 10期

关键词：

D O I：

10.1109/EDL.1985.26214

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：516 / 518

页数：3

共 19 条

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