INTERDIFFUSION IN WIDE-BANDGAP ZN(CD)S(SE) STRAINED LAYER SUPERLATTICES

被引：17

作者：

PARBROOK, PJ

HENDERSON, B

ODONNELL, KP

WRIGHT, PJ

COCKAYNE, B

机构：

[1] Dept. of Phys. and Appl. Phys., Strathclyde Univ., Glasgow

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 08期

关键词：

17;

D O I：

10.1088/0268-1242/6/8/019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The extent of interdiffusion in wide-bandgap II-VI superlattices of ZnS-ZnSe, ZnSe-CdSe and ZnS-CdS grown at low temperature is assessed by measuring the photoluminescence spectra and X-ray diffraction profiles of samples annealed in the temperature range from 300 to 550-degrees-C. It is shown that although ZnS-ZnSe superlattices are stable against anion interdiffusion over the entire temperature range, the common-anion systems ZnSe-CdSe and ZnS-CdS show evidence of disordering at anneal temperatures greater than 400 and 450-degrees-C respectively. These results confirm that the common-anion binary superlattices are stable against interdiffusion at low growth temperature.

引用

页码：818 / 821

页数：4

共 17 条

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