HYDROGEN AND DEUTERIUM DESORPTION-KINETICS FROM SILICON(100) 2X1 STUDIED USING SIMS

Secondary ion mass spectrometry (SIMS) operating with primary ion current density (J < 5 x 10(-8) A cm-2) Was used to study the desorption process of hydrogen and deuterium from silicon(100). The description of the desorption process of hydrogen and deuterium was obtained monitoring the H+ and D+ sims signals as a function of the annealing temperature and annealing time. Low-energy electron diffraction (LEED) measurements enabled the surface coverage to be identified as monohydride or dihydride phases. The desorption of both elements displayed second-order kinetics. In addition, the process of reaction between hydrogen and deuterium adsorbed at different temperatures was studied.