METAL-INSULATOR-TRANSITION IN DOPED SILICON

被引：29

作者：

MOTT, NF ^{[1
]}

KAVEH, M ^{[1
]}

机构：

[1] BAR ILAN UNIV,DEPT PHYS,RAMAT GAN,ISRAEL

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1983年 / 47卷 / 06期

关键词：

D O I：

10.1080/01418638308228265

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：577 / 603

页数：27

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