ELECTRON-SPIN RESONANCE IN ELECTRON-IRRADIATED 3C-SIC

被引：117

作者：

ITOH, H ^{[1
]}

HAYAKAWA, N ^{[1
]}

NASHIYAMA, I ^{[1
]}

SAKUMA, E ^{[1
]}

机构：

[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 09期

关键词：

D O I：

10.1063/1.343920

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4529 / 4531

页数：3

共 10 条

[1] ESR IN IRRADIATED SILICON CARBIDE [J].

BALONA, LADS ;

LOUBSER, JHN .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (11) :2344-&

[2]

Choyke W. J., 1977, International Conference on Radiation Effects in Semiconductors, P58

[3] HIGH-FIELD TRANSPORT IN WIDE-BAND-GAP SEMICONDUCTORS [J].

FERRY, DK .

PHYSICAL REVIEW B, 1975, 12 (06) :2361-2369

[4] PHOTOLUMINESCENCE SPECTROSCOPY OF ION-IMPLANTED 3C-SIC GROWN BY CHEMICAL VAPOR-DEPOSITION [J].

FREITAS, JA ;

BISHOP, SG ;

EDMOND, JA ;

RYU, J ;

DAVIS, RF .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :2011-2016

[5] EPITAXIAL-GROWTH AND CHARACTERIZATION OF BETA-SIC THIN-FILMS [J].

LIAW, P ;

DAVIS, RF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (03) :642-648

[6] DEFECTS IN NEUTRON-IRRADIATED SIC [J].

NAGESH, V ;

FARMER, JW ;

DAVIS, RF ;

KONG, HS .

APPLIED PHYSICS LETTERS, 1987, 50 (17) :1138-1140

[7] GROWTH AND PROPERTIES OF BETA-SIC SINGLE CRYSTALS [J].

NELSON, WE ;

HALDEN, FA ;

ROSENGREEN, A .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) :333-+

[8] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J].

NISHINO, S ;

POWELL, JA ;

WILL, HA .

APPLIED PHYSICS LETTERS, 1983, 42 (05) :460-462

[9]

Philipp HR, 1960, SILICON CARBIDE HIGH, P366

[10] HIGH-TEMPERATURE ELECTRICAL-PROPERTIES OF 3C-SIC EPITAXIAL LAYERS GROWN BY CHEMICAL VAPOR-DEPOSITION [J].

SASAKI, K ;

SAKUMA, E ;

MISAWA, S ;

YOSHIDA, S ;

GONDA, S .

APPLIED PHYSICS LETTERS, 1984, 45 (01) :72-73

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