NON-OHMIC CURRENT TRANSPORT PHENOMENA IN HIGH-RESISTIVITY GAAS

被引:4
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SEITCHIK, JA
STEIN, BF
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10.1063/1.1754790
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O59 [应用物理学];
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页码:22 / &
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[1]  
DUSSEL G, 1966, J APPL PHYS, V37, P2804
[2]   ELECTRIC FIELD EFFECTS IN TRAPPING PROCESSES [J].
DUSSEL, GA ;
BUBE, RH .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) :2797-&
[3]   PHOTOCONDUCTIVITY IN SEMI-INSULATING GALLIUM ARSENIDE [J].
HOLEMAN, BR ;
HILSUM, C .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 22 :19-24
[4]   DOUBLE INJECTION IN INSULATORS [J].
LAMPERT, MA .
PHYSICAL REVIEW, 1962, 125 (01) :126-&
[5]   SIMPLIFIED THEORY OF SPACE-CHARGE-LIMITED CURRENTS IN AN INSULATOR WITH TRAPS [J].
LAMPERT, MA .
PHYSICAL REVIEW, 1956, 103 (06) :1648-1656
[6]   ELECTRICAL TRANSIENTS IN HIGH RESISTIVITY GALLIUM ARSENIDE [J].
NORTHROP, DC ;
THORNTON, PR ;
TREZISE, KE .
SOLID-STATE ELECTRONICS, 1964, 7 (01) :17-&
[7]   2-CARRIER SPACE-CHARGE-LIMITED CURRENT IN A TRAP-FREE INSULATOR [J].
PARMENTER, RH ;
RUPPEL, W .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (10) :1548-1558
[8]   SPACE-CHARGE-LIMITED CURRENTS IN SOLIDS [J].
ROSE, A .
PHYSICAL REVIEW, 1955, 97 (06) :1538-1544