SELECTIVITY AND SI-LOAD IN DEEP TRENCH ETCHING

被引：17

作者：

MULLER, KP

ROITHNER, K

TIMME, HJ

机构：

[1] IBM Microelectronics, Semiconductor Research and Development Center Hopewell Junction

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 27卷 / 1-4期

关键词：

14;

D O I：

10.1016/0167-9317(94)00145-K

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Time dependent measurements of etch rates and mask erosion rates for a variety of different features were carried out utilizing 0.25mum ground rule masks with different silicon loads. A small loading effect for the silicon etching and a strong secondary loading effect for the mask erosion were observed leading to a time dependent selectivity. RIE lag effects for oval trenches and long grooves were quantified by least square fits. Both feature types have essentially the same etch rate and RIE lag.

引用

页码：457 / 462

页数：6

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