GROWTH OF ZNS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：44

作者：

FUJITA, S

TOMOMURA, Y

SASAKI, A

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 09期

关键词：

D O I：

10.1143/JJAP.22.L583

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L583 / L585

页数：3

共 14 条

[1]

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[5]

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[9] PHOTO-LUMINESCENCE AND HETEROJUNCTION PROPERTIES OF ZNSXSE1-X EPITAXIAL LAYERS ON GAAS AND GE GROWN BY ORGANOMETALLIC CVD [J].

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[10] NITROGEN AS SHALLOW ACCEPTOR IN ZNSE GROWN BY ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION [J].

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APPLIED PHYSICS LETTERS, 1982, 40 (03) :246-248

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