LOCALIZATION OF EXCITONS TO CU-RELATED DEFECTS IN GAAS

被引：13

作者：

MONEMAR, B ^{[1
]}

GISLASON, HP ^{[1
]}

WANG, ZG ^{[1
]}

机构：

[1] CHINESE ACAD SCI,INST SEMICOND,BEIJING,PEOPLES R CHINA

来源：

PHYSICAL REVIEW B | 1985年 / 31卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.31.7919

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7919 / 7924

页数：6

共 34 条

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[2]

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[3]

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[4] NEUTRAL (CU-LI) COMPLEXES IN GAP - THE (CU-LI)I BOUND EXCITON AT 2.306 EV [J].

GISLASON, HP ;

MONEMAR, B ;

PISTOL, ME ;

DEAN, PJ ;

HERBERT, DC ;

KANAAH, A ;

CAVENETT, BC .

PHYSICAL REVIEW B, 1985, 31 (06) :3774-3784

[5]

GISLASON HP, 1982, PHYS REV B, V26, P827, DOI 10.1103/PhysRevB.26.827

[6]

GISLASON HP, UNPUB

[7]

GISLASON HP, UNPUB J APPL PHYS

[8]

GROSS EF, 1969, FIZ TVERD TELA+, V11, P277

[9]

GUTKIN V, 1983, SOV PHYS SEMICOND, V17, P61

[10]

GUTKIN V, 1981, SOV PHYS SEMICOND, V15, P1145

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