STRUCTURAL EVALUATION OF GAAS/ALGAAS HETEROINTERFACES BY ATOMIC-RESOLUTION ELECTRON MICROGRAPH WITH CLEAR CONTRAST

被引：11

作者：

FURUTA, T

SAKAKI, H

ICHINOSE, H

ISHIDA, Y

SONE, M

ONOE, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 05期

关键词：

D O I：

10.1143/JJAP.23.L265

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：L265 / L267

页数：3

相关论文

共 6 条

[1] INTERDIFFUSION BETWEEN GAAS AND ALAS
CHANG, LL
KOMA, A
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (03) : 138 - 141
[2] X-RAY-DIFFRACTION STUDY OF INTER-DIFFUSION AND GROWTH IN (GAAS)N(AIAS)M MULTILAYERS
FLEMING, RM
MCWHAN, DB
GOSSARD, AC
WIEGMANN, W
LOGAN, RA
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 357 - 363
[3] DIRECT OBSERVATION OF LATTICE ARRANGEMENT IN MBE GROWN GAAS-ALGAAS SUPER-LATTICES
OKAMOTO, H
SEKI, M
HORIKOSHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (06): : L367 - L369
[4] CRYSTAL-GROWTH KINETICS IN (GAAS)N-(ALAS)M SUPER-LATTICES DEPOSITED BY MOLECULAR-BEAM EPITAXY .1. GROWTH ON SINGULAR (100)GAAS SUBSTRATES
PETROFF, PM
GOSSARD, AC
WIEGMANN, W
SAVAGE, A
[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 44 (01) : 5 - 13
[5] TRANSMISSION ELECTRON-MICROSCOPY OF INTERFACES IN 3-5 COMPOUND SEMICONDUCTORS
PETROFF, PM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 973 - 978
[6] SHENG TT, 1976, IEEE T ELECTRON DEV, V23, P531, DOI 10.1109/T-ED.1976.18447