CUINSE2-BASED SOLAR-CELLS BY SE-VAPOR SELENIZATION FROM SE-CONTAINING PRECURSORS

被引:29
作者
NAKADA, T
ONISHI, R
KUNIOKA, A
机构
[1] Department of Electrical Engineering and Electronics, Aoyama Gakuin University, Setagaya-ku, Tokyo
关键词
D O I
10.1016/0927-0248(94)90142-2
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
We have developed a new approach to prepare graded CIS-based absorber layers using Se-containing precursors in a Se-vapor selenization process. Auger analysis showed that the diffusion of Ga and In were suppressed and had formed a graded CIGS-layer when a Se-containing precursor was used in the selenization process. Active area efficiency of 12.6% was achieved with a ZnO:Al/CdS/graded-CIGS cell fabricated with this approach.
引用
收藏
页码:209 / 214
页数:6
相关论文
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[2]  
Nakada T., 1992, 11TH P EC PHOT SOL E, P794
[3]  
Tarrant D., 1993, 23 IEEE PHOT SPEC C, P372
[4]  
TUTTLE JR, 1994, SOLAR ENERGY MAT SOL, P34