SHORT PULSE GAIN SATURATION IN INGAASP DIODE-LASER AMPLIFIERS

被引：43

作者：

LAI, Y ^{[1
]}

HALL, KL ^{[1
]}

IPPEN, EP ^{[1
]}

EISENSTEIN, G ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,DEPT ELECT ENGN,IL-32000 HAIFA,ISRAEL

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 10期

关键词：

D O I：

10.1109/68.60768

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The saturation behavior of InGaAsP optical amplifiers is studied for input pulsewidths of 15 ps and 150 fs. The measured output saturation energies are 150 and 40 fJ, respectively. A simple rate equation model based on pump-probe results predicts the observed pulsewidth-dependent saturation behavior. © 1990 IEEE

引用

页码：711 / 713

页数：3

共 15 条

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[15] CHANNELLED-SUBSTRATE BURIED HETEROSTRUCTURE INGAASP INP LASERS WITH VAPOR-PHASE EPITAXIAL BASE STRUCTURE AND LIQUID-PHASE EPITAXIAL REGROWTH [J].

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