RESONANTLY ENHANCED, FREQUENCY DOUBLING OF AN 820 NM GAALAS DIODE-LASER IN A POTASSIUM LITHIUM-NIOBATE CRYSTAL

被引：86

作者：

REID, JJE

机构：

[1] Philips Research Laboratories, 5600 JA Eindhoven

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 01期

关键词：

D O I：

10.1063/1.108831

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A potassium lithium niobate crystal was used to double the resonantly enhanced emission of an 820 nm GaAlAs, single-mode diode laser. With a passive resonator enhancement factor of 73 and 11.5 mW of incident near-infrared power, 0.36 mW of second harmonic were produced in quasi-cw operation. The optical quality of the crystal is described and compared with that of KNbO3.

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页码：19 / 21

页数：3

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