HIGH-SPEED GAINASSB/GASB PIN PHOTODETECTORS FOR WAVELENGTHS TO 2.3 MU-M

被引:39
作者
BOWERS, JE [1 ]
SRIVASTAVA, AK [1 ]
BURRUS, CA [1 ]
DEWINTER, JC [1 ]
POLLACK, MA [1 ]
ZYSKIND, JL [1 ]
机构
[1] CRAWFORD HILL LABS, HOLMDEL, NJ 07733 USA
关键词
D O I
10.1049/el:19860096
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:137 / 138
页数:2
相关论文
共 5 条
[1]   26.5 GHZ BANDWIDTH INGAASP LASERS WITH TIGHT OPTICAL CONFINEMENT [J].
BOWERS, E ;
HEMENWAY, BR ;
BRIDGES, TJ ;
BURKHARDT, EG ;
WILT, DP .
ELECTRONICS LETTERS, 1985, 21 (23) :1090-1091
[2]   IMPROVED VERY-HIGH-SPEED PACKAGED INGAAS PIN PUNCH-THROUGH PHOTODIODE [J].
BURRUS, CA ;
BOWERS, JE ;
TUCKER, RS .
ELECTRONICS LETTERS, 1985, 21 (07) :262-263
[3]   LIQUID-PHASE EPITAXIAL GA1-XINXASYSB1-Y LATTICE-MATCHED TO (100) GASB OVER THE 1.71-MU-M 2.33-MU-M WAVELENGTH RANGE [J].
DEWINTER, JC ;
POLLACK, MA ;
SRIVASTAVA, AK ;
ZYSKIND, JL .
JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (06) :729-747
[4]   VERY-HIGH-SPEED BACK-ILLUMINATED INGAAS-INP PIN PUNCH-THROUGH PHOTO-DIODES [J].
LEE, TP ;
BURRUS, CA ;
OGAWA, K ;
DENTAI, AG .
ELECTRONICS LETTERS, 1981, 17 (12) :431-432
[5]   HEAVY-METAL FLUORIDE GLASSES AND FIBERS - A REVIEW [J].
TRAN, DC ;
SIGEL, GH ;
BENDOW, B .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1984, 2 (05) :566-586