QUENCHING OF THE EXCITONIC RESONANCE IN A WAVE-GUIDE QUANTUM-WELL FIELD-EFFECT MODULATOR

被引：7

作者：

TOMBLING, C

STALLARD, MM

ROBERTS, JS

机构：

[1] Dept. of Electron. and Electr. Eng., Univ. Coll. London

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 06期

关键词：

D O I：

10.1088/0268-1242/5/6/006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The introduction of carriers into a quantum well quenches the excitonic absorption in a manner which is suitable for optical modulation. In this work selective doping of a single quantum well provides a large electron population which is successfully controlled using the reverse bias field of a semiconductor junction. Quenching and recovery of the excitonic absorption is observed using spectral photocurrent techniques and a corresponding optical modulation is demonstrated in a device which incorporates an optical waveguide. Narrow quantum wells are shown to have the most desirable optical characteristics and an analysis of observed waveguide modulation performance indicates that contrast ratios of >10dB are readily available. A simple model is used to predict the bias-dependent behaviour of the device and the agreement found with experiment suggests that this is a useful tool for design purposes.

引用

页码：502 / 507

页数：6

共 9 条

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