OPTICAL-PROPERTIES OF THE DOMINANT ND CENTER IN GAP

被引:31
作者
TANIGUCHI, M [1 ]
TAKAHEI, K [1 ]
机构
[1] NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, BASIC RES LABS, MUSASHINO, TOKYO 180, JAPAN
关键词
D O I
10.1063/1.353307
中图分类号
O59 [应用物理学];
学科分类号
摘要
The optical properties of the Nd centers in Nd-doped GaP samples grown by metalorganic chemical vapor deposition have been studied. By using resonant photons to excite the Nd ions directly, we found that the energy separations between the spin-orbit-splitting levels are smaller for Nd in GaP when compared with the corresponding energy separations of Nd in ionic crystals. The crystal field-induced splittings of the dominant Nd center are also found to be smaller compared with the splittings of the other Nd centers in the GaP host. The luminescence lifetime value as a function of sample temperature was also studied. It was found that the luminescence lifetime value of the dominant Nd center remains at a constant 25 mus up to 150 K and becomes smaller as the sample temperature is further increased.
引用
收藏
页码:943 / 947
页数:5
相关论文
共 13 条
[1]   RARE-EARTH COMPLEX DOPANTS IN AC THIN-FILM ELECTROLUMINESCENT CELLS [J].
BENOIT, J ;
BENALLOUL, P ;
BLANZAT, B .
JOURNAL OF LUMINESCENCE, 1981, 23 (1-2) :175-190
[2]  
ENNEN H, 1985, J ELECTRON MATER A, V14, P115
[3]  
JORGENSEN CK, 1967, MATER FYS MEDD DAN V, V35, P24
[4]  
MULLER HD, 1986, J APPL PHYS, V59, P2210, DOI 10.1063/1.336360
[5]   OPTICAL AND ELECTRICAL-PROPERTIES OF YTTERBIUM-DOPED GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
TAGUCHI, A ;
NAKAGOME, H ;
TAKAHEI, K .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (07) :3390-3393
[6]   PHOTOLUMINESCENCE CHARACTERIZATION OF ND-DOPED GAP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
TAKAHEI, K ;
NAKAGOME, H .
JOURNAL OF APPLIED PHYSICS, 1992, 72 (08) :3674-3680
[7]   TEMPERATURE-DEPENDENCE OF INTRA-4F-SHELL PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE SPECTRA FOR ERBIUM-DOPED GAAS [J].
TAKAHEI, K ;
WHITNEY, PS ;
NAKAGOME, H ;
UWAI, K .
JOURNAL OF APPLIED PHYSICS, 1989, 65 (03) :1257-1260
[8]  
TAKAHEI K, 1991, MATER SCI FORUM ICDS, V83, P641
[9]  
TAKAHEI K, 1989, I PHYS C SER, V106, P913
[10]   LUMINESCENCE INTENSITY AND LIFETIME DEPENDENCES ON TEMPERATURE FOR ND-DOPED GAP AND GAAS [J].
TANIGUCHI, M ;
NAKAGOME, H ;
TAKAHEI, K .
APPLIED PHYSICS LETTERS, 1991, 58 (25) :2930-2932