EXCIMER-LASER-INDUCED ELECTRIC-CONDUCTIVITY IN THIN-FILM C-60

被引：14

作者：

PHILLIPS, HM

SARKAR, D

HALAS, NJ

HAUGE, RH

SAUERBREY, R

机构：

[1] RICE UNIV,DEPT CHEM,HOUSTON,TX 77251

[2] RICE UNIV,RICE QUANTUM INST,HOUSTON,TX 77251

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1993年 / 57卷 / 01期

关键词：

D O I：

10.1007/BF00331226

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical conductivity of thin-film C60 has been changed by more than seven orders of magnitude with KrF (248 nm) excimer-laser irradiation. Specific conductivities of 1 OMEGA-1.cm-1 have been obtained. The onset of conductivity is consistent with a laser-induced metal-insulator phase transition. The threshold for KrF-laser ablation of C60 has been determined to be 20 +/- 2 mJ/cm2. This laser-induced process generates an all-carbon semiconductor-metallic junction which may have important technological applications.

引用

页码：105 / 107

页数：3

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