TRANSPORT-PROPERTIES OF GE DOPED AS2SE3 GLASSES

被引:1
作者
KITAMURA, M
ARAI, T
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D O I
10.1143/JPSJ.52.233
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O4 [物理学];
学科分类号
0702 ;
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页码:233 / 240
页数:8
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共 20 条
[1]   MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J].
ANDERSON, PW .
PHYSICAL REVIEW LETTERS, 1975, 34 (15) :953-955
[2]   PHOTOCONDUCTIVITY DECAY IN IMPERFECT CRYSTALS [J].
BUBE, RH ;
GROVE, WM ;
MURCHISON, RK .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) :3515-+
[3]   PHONON-ASSISTED TRANSITION RATES .1. OPTICAL-PHONON-ASSISTED HOPPING IN SOLIDS [J].
EMIN, D .
ADVANCES IN PHYSICS, 1975, 24 (03) :305-348
[4]   SLOW ELECTRONS IN A POLAR CRYSTAL [J].
FEYNMAN, RP .
PHYSICAL REVIEW, 1955, 97 (03) :660-665
[5]   STUDIES OF POLARON MOTION .1. THE MOLECULAR-CRYSTAL MODEL [J].
HOLSTEIN, T .
ANNALS OF PHYSICS, 1959, 8 (03) :325-342
[6]   VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J].
KASTNER, M ;
ADLER, D ;
FRITZSCHE, H .
PHYSICAL REVIEW LETTERS, 1976, 37 (22) :1504-1507
[7]   EXPERIMENTALLY DEDUCED ADIABATIC POTENTIAL OF GE DOPED AS2SE3 GLASSES [J].
KITAMURA, M ;
IWATA, H ;
ARAI, T .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1982, 51 (06) :1865-1870
[8]  
KITAMURA M, 1980, THESIS U TSUKUBA
[9]   PHOTOELECTRIC PHENOMENA IN AMORPHOUS CHALCOGENIDE SEMICONDUCTORS [J].
KOLOMIETS, BT ;
LYUBIN, VM .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 17 (01) :11-46
[10]  
MOTT NF, 1971, ELECTRONIC PROCESSES