DYNAMICS OF CHEMISORPTION AND INDIFFUSION AT SEMICONDUCTOR SURFACES

[1] SUBSPACE HAMILTONIAN TECHNIQUE [J]. PHYSICAL REVIEW B, 1986, 33 (08): : 5611 - 5616

[2] CALCULATION OF DYNAMICAL SURFACE PROPERTIES OF NOBLE-GAS CRYSTALS .2. MOLECULAR DYNAMICS [J]. PHYSICAL REVIEW, 1969, 179 (03): : 887 - +

[3] [Anonymous], ELECTRONIC STRUCTURE

[4] BOUND AND RESONANT (110) SURFACE ELECTRONIC STATES FOR GAAS, GAP AND GASB [J]. SOLID STATE COMMUNICATIONS, 1983, 45 (01) : 13 - 16

[5] SURFACE-STATES AND SURFACE RESONANCES IN INP, INAS, AND INSB [J]. PHYSICAL REVIEW B, 1982, 26 (10): : 5702 - 5705

[6] IMPORTANCE OF RESONANCES IN SURFACE-ELECTRONIC-STATE SPECTROSCOPY - (110) SURFACES OF ZNSE AND ZNTE [J]. PHYSICAL REVIEW B, 1982, 26 (02): : 769 - 772

[7] UNIFIED APPROACH FOR MOLECULAR-DYNAMICS AND DENSITY-FUNCTIONAL THEORY [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (22) : 2471 - 2474

[8] (110) SURFACE-STATES OF GAAS - SENSITIVITY OF ELECTRONIC-STRUCTURE TO SURFACE-STRUCTURE [J]. PHYSICAL REVIEW B, 1978, 18 (04) : 1800 - 1812

[9] CHEMISORPTION SITE GEOMETRY AND INTERFACE ELECTRONIC-STRUCTURE OF GA AND AL ON GAAS(110) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1159 - 1163

[10] CORSTENSEN H, 1987, PHYSICS SEMICONDUCTO

[1] SUBSPACE HAMILTONIAN TECHNIQUE [J]. PHYSICAL REVIEW B, 1986, 33 (08): : 5611 - 5616

[2] CALCULATION OF DYNAMICAL SURFACE PROPERTIES OF NOBLE-GAS CRYSTALS .2. MOLECULAR DYNAMICS [J]. PHYSICAL REVIEW, 1969, 179 (03): : 887 - +

[3] [Anonymous], ELECTRONIC STRUCTURE

[4] BOUND AND RESONANT (110) SURFACE ELECTRONIC STATES FOR GAAS, GAP AND GASB [J]. SOLID STATE COMMUNICATIONS, 1983, 45 (01) : 13 - 16

[5] SURFACE-STATES AND SURFACE RESONANCES IN INP, INAS, AND INSB [J]. PHYSICAL REVIEW B, 1982, 26 (10): : 5702 - 5705

[6] IMPORTANCE OF RESONANCES IN SURFACE-ELECTRONIC-STATE SPECTROSCOPY - (110) SURFACES OF ZNSE AND ZNTE [J]. PHYSICAL REVIEW B, 1982, 26 (02): : 769 - 772

[7] UNIFIED APPROACH FOR MOLECULAR-DYNAMICS AND DENSITY-FUNCTIONAL THEORY [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (22) : 2471 - 2474

[8] (110) SURFACE-STATES OF GAAS - SENSITIVITY OF ELECTRONIC-STRUCTURE TO SURFACE-STRUCTURE [J]. PHYSICAL REVIEW B, 1978, 18 (04) : 1800 - 1812

[9] CHEMISORPTION SITE GEOMETRY AND INTERFACE ELECTRONIC-STRUCTURE OF GA AND AL ON GAAS(110) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1159 - 1163

[10] CORSTENSEN H, 1987, PHYSICS SEMICONDUCTO