WORK-HARDENING AND STRAIN RELAXATION IN STRAINED-LAYER BUFFERS

[1] BIEFELD RM, IN PRESS J CRYST GRO

[2] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1325 - 1327

[3] CORRECTION [J]. APPLIED PHYSICS LETTERS, 1988, 52 (10) : 852 - 852

[4] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[5] Taylor GI, 1934, P ROY SOC LONDON A M, VA145, P362, DOI [DOI 10.1098/RSPA.1934.0106, 10.1098/rspa.1934.0107, DOI 10.1098/RSPA.1934.0107]

[6] CRITICAL STRESSES FOR SIXGE1-X STRAINED-LAYER PLASTICITY [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (21) : 2455 - 2458

[1] BIEFELD RM, IN PRESS J CRYST GRO

[2] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1325 - 1327

[3] CORRECTION [J]. APPLIED PHYSICS LETTERS, 1988, 52 (10) : 852 - 852

[4] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[5] Taylor GI, 1934, P ROY SOC LONDON A M, VA145, P362, DOI [DOI 10.1098/RSPA.1934.0106, 10.1098/rspa.1934.0107, DOI 10.1098/RSPA.1934.0107]

[6] CRITICAL STRESSES FOR SIXGE1-X STRAINED-LAYER PLASTICITY [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (21) : 2455 - 2458