A VERY-LOW OPERATION CURRENT INGAASP/INP TOTAL INTERNAL-REFLECTION OPTICAL SWITCH USING P/N/P/N CURRENT BLOCKING LAYERS

被引：12

作者：

OH, KR ^{[1
]}

PARK, KS ^{[1
]}

OH, DK ^{[1
]}

KIM, HM ^{[1
]}

PARK, HM ^{[1
]}

LEE, KR ^{[1
]}

机构：

[1] KOREA ADV INST SCI & TECHNOL,DEPT ELECT ENGN,TAEJON,SOUTH KOREA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 01期

关键词：

D O I：

10.1109/68.265891

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A very low operation current (20 mA) has been achieved for the first time with an InGaAsP/InP total-internal-reflection optical switch. The optical switch is fabricated on an n+-InP substrate using p/n/p/n current blocking layers. This switch has a large effective contact area and is a self-aligned structure. This is a promising result for making optical integrated circuits.

引用

页码：65 / 67

页数：3

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