SCANNING-TUNNELING-MICROSCOPE STUDY OF THE ALPHA-PHASE AND BETA-PHASE OF THE GAAS(001)-(2X4) RECONSTRUCTION

被引:28
作者
BROEKMAN, LD
LECKEY, RCG
RILEY, JD
STAMPFL, A
USHER, BF
SEXTON, BA
机构
[1] LA TROBE UNIV,DEPT ELECTR ENGN,BUNDOORA,VIC 3083,AUSTRALIA
[2] CSIRO,DIV MAT SCI & TECHNOL,CLAYTON,VIC 3168,AUSTRALIA
来源
PHYSICAL REVIEW B | 1995年 / 51卷 / 24期
关键词
D O I
10.1103/PhysRevB.51.17795
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Atomic-resolution scanning-tunneling-microscope (STM) images of the GaAs (2×4) reconstructed surface are presented which show details of the atomic geometry of two distinct surface structural phases. Interpreted within the presently accepted dimer vacancy model, these structures correspond to the previously suggested α and β phases identified by reflection high-energy-electron-diffraction experiments and from total-energy calculations. Images of the α phase show the position of localized As dimer nonbonding charge density relative to an underlying structure not previously observed in STM studies of this surface. Resolution of the As dimers of the β phase has allowed accurate measurement of the relative spacing of the local charge density associated with the dimer bonds of this surface. © 1995 The American Physical Society.
引用
收藏
页码:17795 / 17799
页数:5
相关论文
共 20 条
[1]  
Dawertiz L., Cryst. Res. Tech., 28, (1993)
[2]  
Farrell H.H., Palmstr om C.J., Reflection high energy electron diffraction characteristic absences in GaAs(100) (2×4)–As: A tool for determining the surface stoichiometry, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 8, (1990)
[3]  
Ma Y., Lordi S., Larsen P.K., Eades J.A., Surf. Sci., 289, (1993)
[4]  
Chadi D.J., Atomic structure of GaAs(100)-(2×1) and (2×4) reconstructed surfaces, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 5, (1987)
[5]  
Ohno T., Phys. Rev. Lett., 70, (1993)
[6]  
Northrup J.E., Froyen S., Phys. Rev. Lett., 71, (1993)
[7]  
Pashley M.D., Haberern K.W., Gaines J.M., Surf. Sci., 267, (1992)
[8]  
Bressler Hill V., Et al., Atom-resolved imaging and spectroscopy on the GaAs(001) surface using tunneling microscopy, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 10, (1992)
[9]  
Zhou J., Et al., Appl. Phys. Lett., 64, (1994)
[10]  
Xu H., Hashizume T., Sakurai T., Japn. J. Appl. Phys., 32, (1993)