PARTIAL SEPARATIONS OF EXTENDED ALPHA-DISLOCATIONS AND BETA-DISLOCATIONS IN II-VI SEMICONDUCTORS

被引：53

作者：

LU, G

COCKAYNE, DJH

机构：

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1986年 / 53卷 / 03期

关键词：

D O I：

10.1080/01418618608242833

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：307 / 320

页数：14

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