QUANTUM OSCILLATIONS IN AN INVERSION LAYER ON P-PBTE

被引：13

作者：

SCHABER, H

DOEZEMA, RE

STILES, PJ

LOPEZOTERO, A

机构：

[1] TECH UNIV MUNICH, DEPT PHYS, D-8046 Munich, GERMANY

[2] JOHANNES KEPLER UNIV, Linz, AUSTRIA

来源：

SOLID STATE COMMUNICATIONS | 1977年 / 23卷 / 06期

关键词：

D O I：

10.1016/0038-1098(77)90243-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：405 / 408

页数：4

共 13 条

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[2] MAGNETO-OSCILLATORY CONDUCTANCE IN SILICON SURFACES [J].

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HOWARD, WE ;

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[4]

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[5]

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[6] DEEP IMPURITY LEVELS IN EPITAXIAL PBS FILMS [J].

LOPEZ, A ;

DUH, D ;

ZEMEL, JN .

MATERIALS SCIENCE AND ENGINEERING, 1975, 17 (01) :63-66

[7] GROWTH OF PBTE FILMS UNDER NEAR-EQUILIBRIUM CONDITIONS [J].

LOPEZOTERO, A .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) :446-448

[8] USE OF A GRAPHICAL REPRESENTATION OF HALL-EFFECT FOR QUALITY-CONTROL OF EPITAXIALLY GROWN PBTE LAYERS [J].

LOPEZOTERO, A .

APPLIED PHYSICS LETTERS, 1976, 29 (07) :441-442

[9]

NILL KW, 1971, PHYSICS SEMIMETALS N, P383

[10]

SZE SM, 1969, PHYSICS SEMICONDUCTO

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